An international research group successfully measured, with a nanometer resolution, the depth of PN junctions varied in a Si wafer in a non-destructive and non-contact manner by observing the THz waves generated by irradiating a Si wafer with a femtosecond laser. The technique will open new avenues for developing advanced semiconductor devices, such as 3D LSI, and provide a comprehensive measurement solution that enables non-contact testing in semiconductor manufacturing.Non-Contact and Nanometer-Scale Measurement of Shallow PN Junction Depth Buried in Si Wafers
June 29, 2025
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An international research group successfully measured, with a nanometer resolution, the depth of PN junctions varied in a Si wafer in a non-destructive and non-contact manner by observing the THz waves generated by irradiating a Si wafer with a femtosecond laser. The technique will open new avenues for developing advanced semiconductor devices, such as 3D LSI, and provide a comprehensive measurement solution that enables non-contact testing in semiconductor manufacturing.
